? semiconductor components industries, llc, 2002 march, 2002 rev. 3 1 publication order number: nthd5904t1/d nthd5904t1 power mosfet dual n-channel 3.1 amps, 20 volts features ? low r ds(on) for higher efficiency ? logic level gate drive ? miniature chipfet surface mount package saves board space applications ? power management in portable and batterypowered products; i.e., cellular and cordless telephones and pcmcia cards maximum ratings (t a = 25 c unless otherwise noted) rating symbol 5 secs steady state unit drainsource voltage v ds 20 v gatesource voltage v gs 12 v continuous drain current (t j = 150 c) (note 1) t a = 25 c t a = 85 c i d 4.2 3.0 3.1 2.2 a pulsed drain current i dm 10 a continuous source current (diode conduction) (note 1) i s 1.8 0.9 a maximum power dissipation (note 1) t a = 25 c t a = 85 c p d 2.1 1.1 1.1 0.6 w operating junction and storage temperature range t j , t stg 55 to +150 c 1. surface mounted on 1 x 1 fr4 board. g d s nchannel mosfet 1 1 1 g s 2 2 nchannel mosfet d 2 device package shipping ordering information nthd5904t1 chipfet 3000/tape & reel chipfet case 1206a style 2 dual nchannel 3.1 amps, 20 volts r ds(on) = 75 m 1 2 3 4 5 6 7 8 pin connections marking diagram a1 a1 = specific device code 1 2 3 4 8 7 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 http://onsemi.com
nthd5904t1 http://onsemi.com 2 thermal characteristics characteristic symbol typ max unit maximum junctiontoambient (note 2) t 5 sec steady state r thja 50 90 60 110 c/w maximum junctiontofoot (drain) steady state r thjf 30 40 c/w electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gatebody leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1.0 a v ds = 16 v, v gs = 0 v, t j = 85 c 5.0 onstate drain current (note 3) i d(on) v ds 5.0 v, v gs = 4.5 v 10 a drainsource onstate resistance (note 3) r ds(on) v gs = 4.5 v, i d = 3.1 a 0.065 0.075 () v gs = 2.5 v, i d = 2.3 a 0.115 0.143 forward transconductance (note 3) g fs v ds = 10 v, i d = 3.1 a 8.0 s diode forward voltage (note 3) v sd i s = 0.9 a, v gs = 0 v 0.8 1.2 v dynamic (note 4) total gate charge q g v 10 v v 45v 4.0 6.0 nc gatesource charge q gs v ds = 10 v, v gs = 4.5 v, i d = 3.1 a 0.6 gatedrain charge q gd i d = 3 . 1 a 1.3 turnon delay time t d(on) 12 18 ns rise time t r v dd = 10 v, r l = 10 i d 10a v gen =45v 35 55 turnoff delay time t d(off) i d 1.0 a, v gen = 4.5 v, r g = 6 19 30 fall time t f r g 6 9.0 15 sourcedrain reverse recovery time t rr i f = 0.9 a, di/dt = 100 a/ s 40 80 2. surface mounted on 1 x 1 fr4 board. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
nthd5904t1 http://onsemi.com 3 typical electrical characteristics c oss v gs = 5 thru 3 v 10 8 6 4 2 0 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 2.5 v 2 v t c = 55 c 25 c 125 c v gs = 4.5 v v gs = 2.5 v 5 4 3 2 1 0 0234 0.30 0.25 0.15 0.05 0 0246810 600 300 200 100 0 048121620 c iss c rss v ds = 10 v i d = 3.1 a 1.6 1.4 1.2 1.0 0.8 0.6 50 25 0 25 50 75 100 125 15 0 v gs = 4.5 v i d = 3.1 a 1 1.5 v 3. 5 3.0 0.20 0.10 500 400 v ds , draintosource voltage (v) v gs , gatetosource voltage (v) i d, drain current (a) i d , drain current (a) v ds , draintosource voltage (v) c, capacitance (pf) r ds(on), onresistance ( w ) q g, total gate charge (nc) v gs, gatetosource voltage (v) (normalized) t j , junction temperature ( c) i d, drain current (a) r ds(on), onresistance ( w ) figure 1. output characteristics figure 2. transfer characteristics figure 3. onresistance vs. drain current figure 4. capacitance figure 5. gate charge figure 6. onresistance vs. junction temperature
nthd5904t1 http://onsemi.com 4 typical electrical characteristics 1 10 0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c t j = 25 c 0.20 0.15 0.10 0.05 0 012345 i d = 3.1 a 0.2 0.8 50 25 0 25 50 75 100 125 150 i d = 250 a power (w) 50 40 30 20 10 10 10 3 2 1 10 1 10 100 60 0 time (sec) 0.4 0 0.6 0.4 0.2 0.0 10 4 v ds , draintosource voltage (v) i s, source current (a) v gs , gatetosource voltage (v) r ds(on), onresistance ( w ) t j , temperature ( c) v gs (th), varience (v) figure 7. sourcedrain diode forward voltage figure 8. onresistance vs. gatetosource voltage figure 9. threshold voltage figure 10. single pulse power figure 11. diode forward voltage vs. current 0.2 0.4 0 0.6 0.8 1.0 1.2 5 4 3 2 1 0 i s , source current (amps) v sd , sourcetodrain voltage (volts) v gs = 0 v t j = 25 c
nthd5904t1 http://onsemi.com 5 typical electrical characteristics 2 1 0.1 0.01 10 10 10 4 3 2 1 10 1 10 0.02 square wave pulse duration (sec) duty cycle = 0.5 0.2 single pulse 0.1 0.05 normalized effective transient thermal impedance 2 1 0.1 0.01 10 10 10 4 3 2 1 10 1 10 100 600 square wave pulse duration (sec) normalized effective transient thermal impedance duty cycle = 0.5 0.2 single pulse 0.1 0.05 0.02 1. duty cycle, d = 2. per unit base = r thja = 90 c/w 3. t jm t a = p dm z thja (t) 4. surface mounted t 1 t 2 p dm notes: t 1 t 2 figure 12. normalized thermal transient impedance, junctiontoambient figure 13. normalized thermal transient impedance, junctiontofoot
nthd5904t1 http://onsemi.com 6 notes
nthd5904t1 http://onsemi.com 7 package dimensions chipfet case 1206a03 issue c b s c d g l a 1234 8765 m j k 1 2 3 4 8 7 6 5 dim min max min max inches millimeters a 2.95 3.10 0.116 0.122 b 1.55 1.70 0.061 0.067 c 1.00 1.10 0.039 0.043 d 0.25 0.35 0.010 0.014 g 0.65 bsc 0.025 bsc j 0.10 0.20 0.004 0.008 k 0.28 0.42 0.011 0.017 l 0.55 bsc 0.022 bsc m 5 nom s 1.80 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. mold gate burrs shall not exceed 0.13 mm per side. 4. leadframe to molded body offset in horizontal and vertical shall not exceed 0.08 mm. 5. dimensions a and b exclusive of mold gate burrs. 6. no mold flash allowed on the top and bottom lead surface. 7. 1206a-01 and 1206a-02 obsolete. new standard is 1206a-03. 0.05 (0.002) 5 nom style 2: pin 1. source 1 2. gate 1 3. source 4. gate 2 5. drain 1 6. drain 1 7. drain 2 8. drain 2 2.00 0.072 0.080
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